Back-end transistors with highly doped low-temperature contacts

ABSTRACT

A back end of line device and method for fabricating a transistor device include a substrate having an insulating layer formed thereon and a channel layer formed on the insulating layer. A gate structure is formed on the channel layer. Dopants are implanted into an upper portion of the channel layer on opposite sides of the gate structure to form shallow source and drain regions using a low temperature implantation process. An epitaxial layer is selectively grown on the shallow source and drain regions to form raised regions above the channel layer and against the gate structure using a low temperature plasma enhanced chemical vapor deposition process, wherein low temperature is less than about 400 degrees Celsius.

RELATED APPLICATION INFORMATION

This application is a Divisional application of U.S. patent applicationSer. No. 13/677,908, filed on Nov. 15, 2012, which is a Continuationapplication of co-pending U.S. patent application Ser. No. 13/665,140filed on Oct. 31, 2012, incorporated herein by reference in itsentirety. This application is related to co-pending application U.S.patent application Ser. No. 13/032,866 filed on Feb. 23, 2011,incorporated herein by reference in its entirety.

BACKGROUND

1. Technical Field

The present invention relates to semiconductor fabrication andsemiconductor devices, and more particularly to selectively grown raisedregions for forming contacts and/or source/drain regions at lowtemperature.

2. Description of the Related Art

Selective epitaxial growth (SEG) of highly doped silicon is suitable forapplications where raised source/drain (S/D) regions are employed fortransistors to reduce the parasitic series resistance associated withshallow-doped S/D regions. However, the conventional methods for SEG ofsilicon require high temperature processing greater than 600 degrees C.,and the use of ultra-pure chlorinated silane gases. The high temperaturerequirement limits the processes and applications which can utilize theconventional methods for SEG of Si.

SUMMARY

A back end of line device and method for fabricating a transistor deviceinclude a substrate having an insulating layer formed thereon and achannel layer formed on the insulating layer. A gate structure is formedon the channel layer. Dopants are implanted into an upper portion of thechannel layer on opposite sides of the gate structure to form shallowsource and drain regions using a low temperature implantation process.An epitaxial layer is selectively grown on the shallow source and drainregions to form raised regions above the channel layer and against thegate structure using a low temperature plasma enhanced chemical vapordeposition process, wherein low temperature is less than about 400degrees Celsius.

Another method for fabricating a transistor device includes providing asubstrate having an insulating layer formed thereon and a channel layerformed on the insulating layer; forming a gate structure on the channellayer; growing a doped epitaxial layer selectively onto exposed portionsof the channel layer adjacent to the gate structure using a lowtemperature plasma enhanced chemical vapor deposition process, whereinlow temperature is less than about 400 degrees Celsius; and driving thedopants into an upper portion of the channel layer below the epitaxiallayer on opposite sides of the gate structure to form shallow source anddrain regions using a low temperature anneal process.

Yet another method for fabricating a transistor device includesproviding a substrate having an insulating layer formed thereon and achannel layer formed on the insulating layer; forming a gate structureon the channel layer; removing portions of the channel layer and theinsulating layer to form openings to expose the substrate; forming aseed layer in the substrate in the openings; and growing an epitaxiallayer selectively on the seed layer in the openings to form raisedregions connecting to the channel layer and against the gate structureusing a low temperature plasma enhance chemical vapor depositionprocess, wherein low temperature is less than about 400 degrees Celsius.

A back end of line (BEOL) transistor device includes a substrate havingan insulating layer formed thereon and a channel layer on the insulatinglayer. A gate structure is formed on the channel layer, and shallowsource and drain regions are formed in an upper portion of the channellayer on opposite sides of the gate structure. An epitaxial layer isselectively grown on the shallow source and drain regions to form raisedregions above the channel layer and against the gate structure. Theshallow source and drain regions and the raised regions include a lowtemperature morphology resulting from low temperature processing toconserve thermal budget wherein low temperature is less than about 400degrees Celsius.

Another back end of line (BEOL) transistor device includes a substratehaving an insulating layer formed thereon and a channel layer on theinsulating layer, a gate structure formed on the channel layer and aseed layer formed in the substrate in openings through the channel layerand the insulation layer. An epitaxial layer is selectively grown on theseed layer in the openings to form raised regions connecting to thechannel layer and against the gate structure.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a cross-sectional view of an illustrative semiconductor devicewith shallow source/drain regions formed with implantation andactivation in accordance with one embodiment;

FIG. 2 is a cross-sectional view of the illustrative semiconductordevice of FIG. 1 with raised source/drain regions selectively grown onthe shallow source/drain regions by a low temperature epitaxial processin accordance with one embodiment;

FIG. 3 is a cross-sectional view of another illustrative semiconductordevice with a channel layer exposed in accordance with one embodiment;

FIG. 4 is a cross-sectional view of the illustrative semiconductordevice of FIG. 3 with raised source/drain regions selectively grown onthe shallow source/drain regions by a low temperature epitaxial processin accordance with one embodiment;

FIG. 5 is a cross-sectional view of the illustrative semiconductordevice of FIG. 4 with the raised source/drain regions being annealed todiffuse dopants into the channel layer to form the shallow source/drainregions by a low temperature anneal in accordance with one embodiment;

FIG. 6 is a cross-sectional view of yet another illustrativesemiconductor device with a seed layer formed in openings which exposethe substrate in accordance with one embodiment;

FIG. 7 is a cross-sectional view of the illustrative semiconductordevice of FIG. 6 with raised source/drain regions selectively grown inaccordance with one embodiment;

FIG. 8 is a block/flow diagram showing an illustrative method forselective epitaxial growth using implantation and activation of dopantsin a channel layer in accordance with the present principles;

FIG. 9 is a block/flow diagram showing an illustrative method forselective epitaxial growth using a channel layer and forming shallowsource and drain regions by diffusing dopants from raised regions inaccordance with the present principles; and

FIG. 10 is a block/flow diagram showing another illustrative method forselective epitaxial growth seed layers in accordance with the presentprinciples.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

In accordance with the present principles, a low temperature process isprovided for selective epitaxial growth (SEG), which enables thepossibility of forming raised source/drain (S/D) for transistorsfabricated in back-end-of-the-line (BEOL) where the processingtemperature is limited to below 400 degrees C. (low temperature). In oneembodiment, a plasma enhanced chemical vapor deposition (PECVD) isconfigured to provide: (1) selective growth of Si on predeterminedareas, where the semiconductor is exposed and (2) high activation levelof dopants in an epi-grown layer. This process provides the selectiveepitaxial growth of highly-doped layers (e.g., Si) at low temperatures.The highly-doped epi-Si film grown by low temperature PECVD may beemployed for raised S/D (RSD) applications for transistors fabricated inthe BEOL to reduce parasitic series resistance. The selective epitaxialgrowth of the film enables the growth of the highly doped Si film withinpredetermined S/D areas. Other applications are also contemplated. Oneof the many advantages of the present process includes a low thermalbudget which can drastically suppress doping diffusion to maintain theabruptness of junctions (reduce diffusion) among other things.

It is to be understood that the present invention will be described interms of a given illustrative semiconductor architecture having orintegrated on a wafer; however, other architectures, structures,substrate materials and process features and steps may be varied withinthe scope of the present invention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

A design for an integrated circuit chip may be created in a graphicalcomputer programming language, and stored in a computer storage medium(such as a disk, tape, physical hard drive, or virtual hard drive suchas in a storage access network). If the designer does not fabricatechips or the photolithographic masks used to fabricate chips, thedesigner may transmit the resulting design by physical means (e.g., byproviding a copy of the storage medium storing the design) orelectronically (e.g., through the Internet) to such entities, directlyor indirectly. The stored design is then converted into the appropriateformat (e.g., GDSII) for the fabrication of photolithographic masks,which typically include multiple copies of the chip design in questionthat are to be formed on a wafer. The photolithographic masks areutilized to define areas of the wafer (and/or the layers thereon) to beetched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., GaInP, InGaAs or SiGe. Thesecompounds may include different proportions of the elements within thecompound, e.g., InGaAs includes In_(x), Ga_(y)As_(1-x-y), where x, y areless than or equal to 1, or SiGe includes Si_(x)Ge_(1-x) where x is lessthan or equal to 1, etc. In addition, other elements may be included inthe compound, such as, e.g., AlInGaAs, and still function in accordancewith the present principles. The compounds with additional elements willbe referred to herein as alloys.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, an illustrative transistorstructure 100 is shown in accordance with one embodiment. Transistorstructure 100 is illustratively depicted as a thin source and drainmetal oxide semiconductor field effect transistor (MOSFET),complementary metal oxide semiconductor (CMOS) device, etc. It should beunderstood that other types of devices/structures may also be employed.The device 100 includes a substrate 102, which may include, e.g., a bulkmonocrystalline silicon substrate, a semiconductor-on-insulator (SOI),an extremely thin SOI (ETSOI) substrate, a partially-depleted SOI(PDSOI) substrate or other substrates. Other substrates may include Ge,III-V substrates (e.g., GaAs), etc. It should also be understood thatthe transistors formed in accordance with the present principles areparticularly useful for back-end-of-the-line (BEOL) applications asopposed to front-end of the line (FEOL) processes. As is known, BEOLrefers to a second portion of IC fabrication where individual devices(transistors, capacitors, resistors, etc.) get interconnected withwiring on a wafer. BEOL generally begins when a first layer of metal isdeposited on the wafer and includes contacts, insulating layers(dielectrics), metal levels, and bonding sites for chip-to-packageconnections. After a FEOL step there is a wafer with isolatedtransistors (without any wires). The wafer may include any semiconductorlayer of a SOI substrate structure. For example, for BEOL, contacts(pads), interconnect wires, vias and dielectric structures are formed.

The device 100 may be employed in three-dimensional (3D) integrationapplications or other applications where epitaxial growth is needed toform component layers. In a particularly useful embodiment, theepitaxial growth is employed to form raised source/drain (S/D) regionsfor transistors. The raised S/D regions described throughout thisdisclosure may be considered extensions of the S/D regions (e.g.,shallow S/D regions) and may be considered contacts to the S/D regionsor may be considered both. The present embodiment will illustrativelydescribe forming raised S/D regions although the present principlesapply to any epitaxial growth and etching applications.

An insulation layer 104 is formed on the substrate 102 and may include aplurality of materials, combinations of materials, multiple layers, etc.Insulation layer 104 may include an oxide (e.g., SiO₂), a nitride (e.g.,SiN, SiON, etc.), a silicate glass, etc. A channel layer 106 may bebonded to the insulation layer 104 by a wafer bonding process or thelike. Channel layer 106 is a semiconductor layer and may include asingle-crystalline (transferred and bonded in the BEOL) or provided in asemiconductor-on-insulator (SOI) substrate) or formed frompoly-crystalline material deposited on the insulation layer 104. In oneembodiment, the channel layer 106 may include a thickness of betweenabout 2 nm to about 2 microns. The channel layer 106 may be added ontothe insulating layer 104 (e.g., BEOL insulating layer).

A gate structure 122 is formed including a gate insulator 110 (e.g., anoxide), a gate conductor 112 (e.g., doped polysilicon or a metal, suchas Cu, or other suitable conductor), and spacers 114 (e.g., nitride).Other gate structures and materials may also be employed.

Source and drain (S/D) regions 108 are formed in the channel layer 106by a low temperature implantation process. A junction depth of the S/Dregions 108 may range from about 2 nm to about 50 nm. The lowtemperature implantation is employed to reduce the thermal budget. Theimplantation is preferably performed at less than about 150 degrees C.,although higher temperatures may be employed (e.g., up to about 400degrees C.) followed by a low temperature activation step below about400 degrees C. The implantation may include p-type or n-typeions/dopants 116 depending on the type of device 100 being fabricated.The implantation and activation forms the S/D regions 108 and preparesthe surfaces of regions 108 for epitaxial growth.

Raised S/D (RSD) regions 120 (FIG. 2) are formed by epitaxial growth.The epitaxial growth may include a highly doped or undoped silicon attemperatures as low as 150 degrees C. on predetermined areas of thesubstrate 102. The predetermined areas are designated by the formationof the S/D regions 108. The shape and the location of the regions 108maps out where selective growth will occur as described with respect toFIG. 2.

Referring to FIG. 2, raised S/D (RSD) regions 120 are grown from theregions 108 of the channel layer 106 by selective epitaxial growth. Theimplantation and activation of the regions 108 promotes selectiveepitaxial growth of Si, SiGe, SiC and their alloys and combinations. Theepitaxial Si layer may include germanium and/or carbon. The RSD regions120 may be grown from Ge, III-V materials and Si. Selective growth isachieved from the implanted and activated regions 108.

In one embodiment, the selective epitaxial growth of silicon isperformed in a hydrogen diluted silane environment using a plasmaenhanced chemical vapor deposition process (PECVD) or heavily dopedPECVD (HD-PECVD). The gas ratio of hydrogen gas to silane gas([H₂]/[SiH₄]) at 150 degrees C. is preferably between 0 to about 1000.In particularly useful embodiments, epitaxially growth of silicon beginsat a gas ratio of about 5-10. The epitaxial Si quality is improved byincreasing the hydrogen dilution, e.g., to 5 or greater.

Epitaxial silicon can be grown using various gas sources, e.g., silane(SiH₄), dichlorosilane (DCS), SiF₄, SiCl₄ or the like. The quality ofepitaxial silicon improves by increasing the dilution of hydrogen usingthese or other gases. For higher hydrogen dilution, smoother interfaceswere produced (epitaxial silicon to crystalline silicon) and fewerstacking faults and other defects were observed.

Radio-frequency (RF) or direct current (DC) plasma enhanced chemicalvapor deposition (CVD) may be employed preferably at depositiontemperature ranges from about room temperature to about 500 degrees C.,and preferably from about 150 degrees C. to about 250 degrees C. Plasmapower density may range from about 2 mW/cm² to about 2000 mW/cm². Adeposition pressure range may be from about 10 mTorr to about 5 Torr.The amount of dilution gas depends on the deposition temperature. At lowgrowth temperature of ˜150 degrees C., the hydrogen content in the filmmay be between about 10¹⁸ about 10²¹ atoms/cm³. Higher depositiontemperatures will result in lower hydrogen incorporation.

In one embodiment, high dopant activation can be obtained attemperatures as low as 150 degrees C. This makes the present methodsattractive for applications in 3D integration and raised S/Dfabrications, especially for BEOL. The epitaxial Si may contain, e.g.,carbon, germanium, phosphorus, arsenic, boron, etc. The low-temperatureepitaxial Si may be grown on different substrates, such as Si, Ge, andIII-Vs.

Referring to FIG. 3, an illustrative transistor structure 200 is shownin accordance with another embodiment. Transistor structure 200 isillustratively depicted as a thin source and drain metal oxidesemiconductor field effect transistor (MOSFET), complementary metaloxide semiconductor (CMOS) device, etc. It should be understood thatother types of devices/structures may also be employed. The device 200includes substrate 102, which may include, e.g., a bulk monocrystallinesilicon substrate, a semiconductor-on-insulator (SOI), an extremely thinSOI (ETSOI) substrate, a partially-depleted SOI (PDSOI) substrate orother substrates. Other substrates may include Ge, III-V substrates(e.g., GaAs), etc. The device 200 may be employed in the sameapplications and manner as device 100.

Insulation layer 104 is formed on the substrate 102. Channel layer 106is a semiconductor layer and may include a single-crystalline(transferred and bonded in the BEOL) or provided in asemiconductor-on-insulator (SOI) substrate) or formed frompoly-crystalline material deposited on the insulation layer 104. Gatestructure 122 is formed including gate insulator 110 (e.g., an oxide),gate conductor 112 (e.g., doped polysilicon or a metal, such as Cu, orother suitable conductor), and spacers 114 (e.g., nitride). Other gatestructures and materials may also be employed.

In this embodiment, S/D regions (108, FIG. 2), are not formed byimplantation and activation as in the embodiment of FIGS. 1 and 2.Instead, openings 202 are formed in a dielectric layer 204 to permitselective deposition of raised S/D regions as will be described withrespect to FIG. 4.

Referring to FIG. 4, raised S/D (RSD) regions 220 are grown on exposedregions of the channel layer 106 in openings (202, FIG. 3) by selectiveepitaxial growth. An epitaxial layer forming RSD regions 220 may includegermanium and/or carbon. The RSD regions 220 may be grown from Ge, III-Vmaterials and Si (channel layer 106).

In one embodiment, the selective epitaxial growth of silicon isperformed in a hydrogen diluted silane environment using a PECVD orHD-PECVD. The epitaxial growth may be performed in accordance with oneor more of the embodiments described with respect to FIGS. 1 and 2. TheRSD regions 220 are preferably highly doped having a dopantconcentration of between about 1×10¹⁸/cm³ to about 1×10²¹/cm³. Theepitaxial Si may contain, e.g., carbon, germanium, phosphorus, arsenic,boron, etc. The low-temperature epitaxial Si may be grown on differentsubstrates, such as Si, Ge, and III-Vs.

Referring to FIG. 5, shallow S/D regions 208 are formed in the channellayer 106 below the RSD regions 220 by performing an anneal process. Theanneal process drives dopants from the RSD regions 220 into the channellayer 106 preferably at low temperatures, e.g., less than about 400degrees C. Lower temperatures may be employed as well for longerduration. The highly doped the RSD regions 220 transfer dopants into thechannel layer 106 to form the shallow S/D regions 208 which improvetransistor operation of the device 200. After the formation of theshallow S/D regions 208, the dielectric layer 204 may be removed andreplaced with other dielectric layers and/or structures in accordancewith the type of device and application.

Referring to FIG. 6, in this embodiment, S/D regions (108, FIG. 2), arenot formed by implantation and activation as in the embodiment of FIGS.1 and 2. Instead, openings 302 are formed in the insulation layer 104 topermit selective deposition of raised S/D regions as will be described.The openings 302 may be formed using lithographic processing to form anetch mask which includes exposed portions of the insulation layer 104where openings are to be formed. The openings 302 are formed using areactive ion etch (RIE) or other anisotropic etching process thatremoves the insulation layer 104 to expose the substrate 102 inpredetermined areas.

While the substrate 102 may be employed as exposed to selectively growRSD regions 320 (FIG. 7), a seed layer 304 may be formed to enhanceselectivity for growing the RSD regions 320 (FIG. 7). In thisembodiment, the substrate 102 is preferably a single-crystallinesubstrate. The seed layer(s) 304 may be formed by doping regions in thesubstrate 102 corresponding to the openings 302. The doping may occurusing an implantation and activation process similar to that describedwith respect to FIGS. 1 and 2. The implantation and activation processesare preferably low temperature processes below 400 degrees C. and morepreferably below 200 degrees C. and as low as about 150 degrees C.

RSD regions 320 are grown from the seed layer 304 (or simply from thesubstrate 102) by selective epitaxial growth. The implantation andactivation of the seed layer 304 promotes selective epitaxial growth ofSi, SiGe, SiC and their alloys and combinations. In one embodiment, theseed layer 304 is part of a main substrate or wafer on which the circuitelements were formed during front-end of the line process (prior toback-end of the line process). The epitaxial Si layer may includegermanium and/or carbon. The RSD regions 320 may be grown from Ge, III-Vmaterials and Si. Selective growth is achieved from the implanted andactivated seed regions 304.

In one embodiment, the selective epitaxial growth of silicon isperformed in a hydrogen diluted silane environment using a plasmaenhanced chemical vapor deposition process (PECVD) or heavily dopedPECVD (HD-PECVD). The gas ratio of hydrogen gas to silane gas([H₂]/[SiH₄]) at 150 degrees C. is preferably between 0 to about 1000.In particularly useful embodiments, epitaxial growth of silicon beginsat a gas ratio of about 5-10. The epitaxial Si quality is improved byincreasing the hydrogen dilution, e.g., to 5 or greater.

Epitaxial silicon can be grown using various gas sources, e.g., silane(SiH₄), dichlorosilane (DCS), SiF₄, SiCl₄ or the like. The quality ofepitaxial silicon improves by increasing the dilution of hydrogen usingthese or other gases. For higher hydrogen dilution, smoother interfaceswere produced (epitaxial silicon to crystalline silicon) and fewerstacking faults and other defects were observed.

RF or DC PECVD may be employed preferably at deposition temperatureranges from about room temperature to about 500 degrees C., andpreferably from about 150 degrees C. to about 250 degrees C. Plasmapower density may range from about 2 mW/cm² to about 2000 mW/cm². Adeposition pressure range may be from about 10 mTorr to about 5 Torr.

As show in FIG. 7, the RSD regions 320 grow to a height of the channellayer 106 and come in contact with the channel layer 106 along endportions of the channel layers below the gate structure 122. The channellayer 106 and the RSD regions 320 form “H” shapes in the embodimentshown. It is preferably that the materials selected for the RSD regions320 and the channel layer 106 are compatible so that when the channel isconducting, the charge is not inhibited by the channel layer to RSDregion interface.

The low temperature RSD regions 120, 220, 320 may include asingle-crystalline polycrystalline, microcrystalline or nanocrystallinestructure or form. Depending on the application, the RSD regions 120,220, 320 may be doped in-situ (during the formation process) or byemploying an implantation process after formation. RSD regions 120, 220,320 formed from a silicon base material may include germanium carbon,hydrogen, deuterium and may also be doped with boron, phosphorus,arsenic, etc.

RSD regions 120, 220, 320 formed by low temperature PECVD in accordancewith the present principles provide low thermal budget manufacture forBEOL processes. One advantage includes drastic suppression of dopingdiffusion to already formed structures. In this way, already formedstructures, such as the channel layer, shallow source/drain regions,etc. maintain their well-defined morphology (diffusion is reduced) whichreduces parasitic series resistance, among other things.

With respect to FIGS. 8, 9 and 10, it should be noted that, in somealternative implementations, the functions noted in the blocks may occurout of the order noted. For example, two blocks shown in succession may,in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustrations, and combinations ofblocks in the block diagrams and/or flowchart illustrations, can beimplemented by special purpose hardware-based systems that perform thespecified functions or acts, or combinations of special purpose hardwareand computer instructions.

Referring to FIG. 8, methods for fabricating a transistor device aredescribed and shown in accordance with illustrative embodiments. Inblock 402, a substrate is provided having an insulating layer formedthereon and a channel layer formed on the insulating layer. The channellayer may be added by wafer bonding to the insulating layer, preferablya BEOL insulating layer. In block 404, a gate structure is formed on thechannel layer. The channel layer may include a crystalline form of oneof Si, Ge and a III-V material, and the crystalline form of the channellayer may include single-crystalline and/or polycrystalline material.

In block 406, dopants are implanted into an upper portion of the channellayer on opposite sides of the gate structure to form shallow source anddrain regions using a low temperature implantation process. In block408, the dopants are activated using a low temperature activationprocess.

In block 410, an epitaxial layer is selectively grown on the shallowsource and drain regions to form raised regions above the channel layerand against the gate structure using a low temperature plasma enhancechemical vapor deposition process. The low temperature is less thanabout 400 degrees Celsius. The low temperature plasma enhanced chemicalvapor deposition process may include using a dilution gas and a sourcegas with a gas ratio of dilution gas to source gas of between 0 to about1000 at about 150 degrees C. In one embodiment, raised source and drainregions are formed above the channel layer at a temperature of betweenabout 150 to about 250 degrees Celsius.

In block 412, growing the epitaxial layer may include forming openingsin a dielectric layer and depositing the epitaxial layer on the shallowsource and drain regions. In block 414, growing the epitaxial layer mayinclude depositing the epitaxial layer selective to the shallow sourceand drain regions instead of other portions of the channel layer. Inblock 416, growing the epitaxial layer may include growing a dopedepitaxial layer on sides of the gate structure to form contacts to theshallow source and drain regions. In block 418, processing continues tocomplete the device.

Referring to FIG. 9, another method for fabricating a transistor deviceis described and shown. In block 502, a substrate is provided having aninsulating layer formed thereon and a channel layer formed on theinsulating layer. In block 504, a gate structure is formed on thechannel layer. The channel layer may include a crystalline form of oneof Si, Ge and a III-V material, and the crystalline form of the channellayer may include single-crystalline and/or polycrystalline material.

In block 506, a doped epitaxial layer is selectively grown onto exposedportions of the channel layer adjacent to the gate structure using a lowtemperature plasma enhance chemical vapor deposition process, whereinlow temperature is less than about 400 degrees Celsius.

In block 508, openings may be formed in a dielectric layer and formedover the channel layer. The epitaxial layer is deposited in the openingsfor the selective deposition. In block 510, the doped epitaxial layermay be grown on sides of the gate structure to form contacts to theshallow source and drain regions. The doped epitaxial layer may be grownto form raised source/drain regions.

In block 512, the dopants are driven (diffused) into an upper portion ofthe channel layer below the epitaxial layer on opposite sides of thegate structure to form shallow source and drain regions using a lowtemperature anneal process. In block 514, processing continues tocomplete the device.

Referring to FIG. 10, yet another method for fabricating a transistordevice is described and shown. In block 602, a substrate is providedhaving an insulating layer formed thereon and a channel layer formed onthe insulating layer. In block 604, a gate structure is formed on thechannel layer. The channel layer may include a crystalline form of oneof Si, Ge and a III-V material, and the crystalline form of the channellayer may include single-crystalline and/or polycrystalline material.

In block 606, portions of the channel layer and the insulating layer areremoved to form openings to expose the substrate. In block 608, a seedlayer is formed in the substrate in the openings. The seed layer mayinclude the surface of the main substrate (e.g., wafer) on which thecircuit elements are formed prior to BEOL, e.g. FEOL devices. The seedlayer may include a doped portion of the substrate exposed in theopenings. An activation process may be employed (at low temperature).

In block 610, an epitaxial layer is selectively grown on the seed layerin the openings to form raised regions connecting to the channel layerand formed against the gate structure using a low temperature plasmaenhance chemical vapor deposition process. The epitaxial layer may beformed on sides of the gate structure to form contacts or source anddrain regions. The low temperature is less than about 400 degreesCelsius. The low temperature plasma enhanced chemical vapor depositionprocess includes a dilution gas and a source gas with a gas ratio ofdilution gas to source gas of between 0 to about 1000 at about 150degrees C. In block 612, processing continues to complete the device.

Having described preferred embodiments for back-end transistors withhighly doped low-temperature contacts (which are intended to beillustrative and not limiting), it is noted that modifications andvariations can be made by persons skilled in the art in light of theabove teachings. It is therefore to be understood that changes may bemade in the particular embodiments disclosed which are within the scopeof the invention as outlined by the appended claims. Having thusdescribed aspects of the invention, with the details and particularityrequired by the patent laws, what is claimed and desired protected byLetters Patent is set forth in the appended claims.

What is claimed is:
 1. A back end of line (BEOL) transistor device,comprising: a substrate having an insulating layer formed thereon and achannel layer on the insulating layer; a gate structure formed on thechannel layer; a seed layer formed in the substrate in openings throughthe channel layer and the insulation layer; and an epitaxial layerselectively grown on the seed layer in the openings to form raisedregions connecting to the channel layer and against the gate structure.2. The device as recited in claim 1, wherein the raised regions includea low temperature morphology resulting from low temperature processingto conserve thermal budget wherein low temperature is less than about400 degrees Celsius.
 3. The device as recited in claim 1, wherein thechannel layer includes a crystalline form of one of Si, Ge and a III-Vmaterial and wherein the crystalline form of the channel layer issingle-crystalline or polycrystalline.
 4. The device as recited in claim1, wherein the epitaxial layer forms contacts.
 5. The device as recitedin claim 1, wherein the epitaxial layer forms raised source and drainregions.
 6. The device as recited in claim 1, wherein the epitaxiallayer includes a dilution gas from a low temperature plasma enhancedchemical vapor deposition process where the dilution gas and a sourcegas include a gas ratio of dilution gas to source gas of between 0 toabout 1000 at about 150 degrees C.
 7. The device as recited in claim 1,wherein the raised regions each include a single crystal structure. 8.The device as recited in claim 1, wherein the raised regions includesilicon and one or more of germanium, carbon, hydrogen and deuterium. 9.The device as recited in claim 1, wherein the seed layer includes awafer used for forming front end of line devices.
 10. The device asrecited in claim 1, wherein the seed layer includes one of Si, SiGe or aIII-V material.
 11. The device as recited in claim 1, wherein theinsulating layer is a BEOL insulating layer and the channel layer isbonded to the insulating layer.